Nexperia-Single FETs, MOSFETs-PSMN019-100YLX

Description

Drain to Source Voltage;100V/Gate Charge(Qg);72.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;167W/RDS(on);18mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);182pF/Current - Continuous Drain(Id);56A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;5.085nF


100V 18mΩ@10V 1 N-channel 167W SOT-669 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;100V/Gate Charge(Qg);72.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;167W/RDS(on);18mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);182pF/Current - Continuous Drain(Id);56A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);72.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;167W/RDS(on);18mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);182pF/Current - Continuous Drain(Id);56A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;5.085nF


    100V 18mΩ@10V 1 N-channel 167W SOT-669 Single FETs, MOSFETs RoHS

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