Nexperia-Single FETs, MOSFETs-PSMN022-30BL,118

Description

Drain to Source Voltage;30V/Gate Charge(Qg);9nC@10V/Number;1 N-channel/Pd - Power Dissipation;41W/RDS(on);22.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2.15V/Ciss-Input Capacitance;447pF


30V 22.6mΩ@10V 1 N-channel 41W D2PAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);9nC@10V/Number;1 N-channel/Pd - Power Dissipation;41W/RDS(on);22.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2.15V/Ciss-Input Capacitance;447pF30V 22.6mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);9nC@10V/Number;1 N-channel/Pd - Power Dissipation;41W/RDS(on);22.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2.15V/Ciss-Input Capacitance;447pF


    30V 22.6mΩ@10V 1 N-channel 41W D2PAK Single FETs, MOSFETs RoHS

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