Nexperia-Single FETs, MOSFETs-PSMN034-100BS,118

Description

Drain to Source Voltage;100V/Gate Charge(Qg);23.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;86W/RDS(on);34.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.201nF


100V 34.5mΩ@10V 1 N-channel 86W D2PAK Single FETs, MOSFETs RoHS

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Drain to Source Voltage;100V/Gate Charge(Qg);23.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;86W/RDS(on);34.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.201nF100V 34.5mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);23.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;86W/RDS(on);34.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.201nF


    100V 34.5mΩ@10V 1 N-channel 86W D2PAK Single FETs, MOSFETs RoHS

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