Nexperia-Single FETs, MOSFETs-PSMN165-200K518

Description

Drain to Source Voltage;200V/Gate Charge(Qg);16.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.5W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.33nF/Output Capacitance(Coss);140pF


200V 165mΩ@10V 1 N-channel 3.5W SO-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);16.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.5W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);16.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.5W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.33nF/Output Capacitance(Coss);140pF


    200V 165mΩ@10V 1 N-channel 3.5W SO-8 Single FETs, MOSFETs RoHS

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