Nexperia-Single FETs, MOSFETs-PSMN1R9-40YSDX

Description

Drain to Source Voltage;40V/Gate Charge(Qg);80nC@10V/Number;1 N-channel/Pd - Power Dissipation;194W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);414pF/Current - Continuous Drain(Id);200A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;6.198nF


40V 1.9mΩ@10V 1 N-channel 194W SOT-669 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);80nC@10V/Number;1 N-channel/Pd - Power Dissipation;194W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);414pF/Current - Continuous Drain(Id);200A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);80nC@10V/Number;1 N-channel/Pd - Power Dissipation;194W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);414pF/Current - Continuous Drain(Id);200A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;6.198nF


    40V 1.9mΩ@10V 1 N-channel 194W SOT-669 Single FETs, MOSFETs RoHS

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