Nexperia-Single FETs, MOSFETs-PSMN2R2-40YSDX

Description

Drain to Source Voltage;40V/Gate Charge(Qg);63nC@10V/Number;1 N-channel/Pd - Power Dissipation;166W/RDS(on);2.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);193pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;3.664nF


40V 2.2mΩ@10V 1 N-channel 166W SOT-669 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;40V/Gate Charge(Qg);63nC@10V/Number;1 N-channel/Pd - Power Dissipation;166W/RDS(on);2.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);193pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);63nC@10V/Number;1 N-channel/Pd - Power Dissipation;166W/RDS(on);2.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);193pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;3.664nF


    40V 2.2mΩ@10V 1 N-channel 166W SOT-669 Single FETs, MOSFETs RoHS

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