Nexperia-Single FETs, MOSFETs-PSMN3R9-25MLC,115

Description

Drain to Source Voltage;25V/Gate Charge(Qg);21.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;69W/RDS(on);4.15mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));2.15V/Ciss-Input Capacitance;1.524nF


25V 4.15mΩ@10V 1 N-channel 69W SOT-1210 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;25V/Gate Charge(Qg);21.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;69W/RDS(on);4.15mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));2.15V/Ciss-Input Capacitance;1.524nF25V 4.15mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;25V/Gate Charge(Qg);21.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;69W/RDS(on);4.15mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));2.15V/Ciss-Input Capacitance;1.524nF


    25V 4.15mΩ@10V 1 N-channel 69W SOT-1210 Single FETs, MOSFETs RoHS

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