Nexperia-Single FETs, MOSFETs-PSMN4R3-30BL,118

Description

Drain to Source Voltage;30V/Gate Charge(Qg);41.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;103W/RDS(on);4.1mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.15V/Ciss-Input Capacitance;2.4nF


30V 4.1mΩ@10V 1 N-channel 103W D2PAK Single FETs, MOSFETs RoHS

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Drain to Source Voltage;30V/Gate Charge(Qg);41.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;103W/RDS(on);4.1mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.15V/Ciss-Input Capacitance;2.4nF30V 4.1mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);41.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;103W/RDS(on);4.1mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.15V/Ciss-Input Capacitance;2.4nF


    30V 4.1mΩ@10V 1 N-channel 103W D2PAK Single FETs, MOSFETs RoHS

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