Nexperia-Single FETs, MOSFETs-PSMN5R0-100ES

Description

Drain to Source Voltage;100V/Gate Charge(Qg);170nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;338W/RDS(on);5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);381pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;9.9nF/Output Capacitance(Coss);660pF


100V 5mΩ@10V 1 N-channel 338W Single FETs, MOSFETs RoHS

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Drain to Source Voltage;100V/Gate Charge(Qg);170nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;338W/RDS(on);5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);381pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);170nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;338W/RDS(on);5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);381pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;9.9nF/Output Capacitance(Coss);660pF


    100V 5mΩ@10V 1 N-channel 338W Single FETs, MOSFETs RoHS

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