Nexperia-Single FETs, MOSFETs-PSMN6R3-120ESQ

Description

Drain to Source Voltage;120V/Gate Charge(Qg);207.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;405W/RDS(on);6.7mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);358pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;11.384nF


120V 6.7mΩ@10V 1 N-channel 405W SOT-226-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;120V/Gate Charge(Qg);207.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;405W/RDS(on);6.7mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);358pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;120V/Gate Charge(Qg);207.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;405W/RDS(on);6.7mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);358pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;11.384nF


    120V 6.7mΩ@10V 1 N-channel 405W SOT-226-3 Single FETs, MOSFETs RoHS

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