Nexperia-Single FETs, MOSFETs-PSMN8R5-108ESQ127

Description

Drain to Source Voltage;108V/Gate Charge(Qg);111nC@10V/Type;N-Channel/Pd - Power Dissipation;263W/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);256pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;380pF


108V 8.5mΩ@10V 263W Single FETs, MOSFETs RoHS

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Drain to Source Voltage;108V/Gate Charge(Qg);111nC@10V/Type;N-Channel/Pd - Power Dissipation;263W/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);256pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;380pF108V... Read more

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    Description

    Drain to Source Voltage;108V/Gate Charge(Qg);111nC@10V/Type;N-Channel/Pd - Power Dissipation;263W/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);256pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;380pF


    108V 8.5mΩ@10V 263W Single FETs, MOSFETs RoHS

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