FET Type;1 P-Channel/Gate-Source Cutoff Voltage (VGS(off));750mV@1uA/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;350mW/Drain Current (Idss);1mA@15V/Ciss-Input Capacitance;7pF@15V350mW 1 P-Channel 1mA@15V 40V TO-92-3... Read more

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