NTE Electronics-JFETs-NTE133

Description

FET Type;1 N-channel/Gate-Source Breakdown Voltage (Vgss);25V/Pd - Power Dissipation;300mW/Drain Current (Idss);500uA@15V/Operating Temperature;-55℃~+150℃@(Tj)


500uA@15V 300mW 1 N-channel 25V TO-106 JFETs

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FET Type;1 N-channel/Gate-Source Breakdown Voltage (Vgss);25V/Pd - Power Dissipation;300mW/Drain Current (Idss);500uA@15V/Operating Temperature;-55℃~+150℃@(Tj)500uA@15V 300mW 1 N-channel 25V TO-106 JFETs Read more

$33.27 Excl. VAT

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    Description

    FET Type;1 N-channel/Gate-Source Breakdown Voltage (Vgss);25V/Pd - Power Dissipation;300mW/Drain Current (Idss);500uA@15V/Operating Temperature;-55℃~+150℃@(Tj)


    500uA@15V 300mW 1 N-channel 25V TO-106 JFETs

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