FET Type;1 P-Channel/Gate-Source Cutoff Voltage (VGS(off));5V@10nA/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;350mW/RDS(on);85Ω/Ciss-Input Capacitance;5.5pF@10V/Operating Temperature;-55℃~+150℃@(Tj)350mW 1 P-Channel 85Ω 30V TO-92 JFETs... Read more

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