NTE Electronics-JFETs-NTE2938

Description

FET Type;1 P-Channel/Gate-Source Cutoff Voltage (VGS(off));800mV@10nA/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;350mW/RDS(on);300Ω/Drain Current (Idss);1.5mA@15V/Operating Temperature;-55℃~+150℃


350mW 1 P-Channel 1.5mA@15V 300Ω 30V TO-92 JFETs RoHS

Product form

FET Type;1 P-Channel/Gate-Source Cutoff Voltage (VGS(off));800mV@10nA/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;350mW/RDS(on);300Ω/Drain Current (Idss);1.5mA@15V/Operating Temperature;-55℃~+150℃350mW 1 P-Channel 1.5mA@15V 300Ω 30V... Read more

$18.42 Excl. VAT

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    Description

    FET Type;1 P-Channel/Gate-Source Cutoff Voltage (VGS(off));800mV@10nA/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;350mW/RDS(on);300Ω/Drain Current (Idss);1.5mA@15V/Operating Temperature;-55℃~+150℃


    350mW 1 P-Channel 1.5mA@15V 300Ω 30V TO-92 JFETs RoHS

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