FET Type;1 P-Channel/Gate-Source Cutoff Voltage (VGS(off));1V@1uA/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;310mW/Drain Current (Idss);2mA@15V/Ciss-Input Capacitance;7pF@15V/Operating Temperature;-65℃~+135℃@(Tj)310mW 1 P-Channel 2mA@15V 40V... Read more

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