FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));500mV@10nA/Gate-Source Breakdown Voltage (Vgss);25V/Pd - Power Dissipation;350mW/Drain Current (Idss);4mA@15V/Ciss-Input Capacitance;5pF@15V/Operating Temperature;-65℃~+150℃4mA@15V 1 N-channel 350mW 25V... Read more

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