FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));6V@1nA/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;300mW/Drain Current (Idss);5mA@15V/Ciss-Input Capacitance;4pF@15V/Operating Temperature;-65℃~+175℃5mA@15V 300mW 1 N-channel 30V... Read more

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