NTE Electronics-JFETs-NTE459

Description

FET Type;1 N-channel/Gate-Source Breakdown Voltage (Vgss);50V/Pd - Power Dissipation;300mW/Drain Current (Idss);2mA@15V/Ciss-Input Capacitance;6pF@15V


300mW 1 N-channel 2mA@15V 50V TO-72 JFETs RoHS

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FET Type;1 N-channel/Gate-Source Breakdown Voltage (Vgss);50V/Pd - Power Dissipation;300mW/Drain Current (Idss);2mA@15V/Ciss-Input Capacitance;6pF@15V300mW 1 N-channel 2mA@15V 50V TO-72 JFETs RoHS Read more

$65.88 Excl. VAT

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    Description

    FET Type;1 N-channel/Gate-Source Breakdown Voltage (Vgss);50V/Pd - Power Dissipation;300mW/Drain Current (Idss);2mA@15V/Ciss-Input Capacitance;6pF@15V


    300mW 1 N-channel 2mA@15V 50V TO-72 JFETs RoHS

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