FET Type;1 P-Channel/Gate-Source Breakdown Voltage (Vgss);20V/Pd - Power Dissipation;300mW/RDS(on);800Ω/Drain Current (Idss);2mA@10V/Ciss-Input Capacitance;20pF@10V300mW 2mA@10V 1 P-Channel 800Ω 20V TO-72 JFETs Read more

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