FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));4V@500pA/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;360mW/RDS(on);25Ω/Drain Current (Idss);50mA@15V/Ciss-Input Capacitance;18pF@10V/Operating Temperature;-65℃~+175℃360mW 50mA@15V 1 N-channel 25Ω... Read more

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