FET Type;1 N-channel/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;310mW/RDS(on);30Ω/Drain Current (Idss);50mA@20V/Ciss-Input Capacitance;10pF@12V/Operating Temperature;-65℃~+150℃310mW 50mA@20V 1 N-channel 30Ω 30V TO-92 JFETs Read more

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