NTE Electronics-JFETs-NTE468

Description

FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));3V@1A/Gate-Source Breakdown Voltage (Vgss);35V/Pd - Power Dissipation;625mW/RDS(on);30Ω/Drain Current (Idss);20mA@15V/Operating Temperature;-55℃~+150℃


20mA@15V 625mW 1 N-channel 30Ω 35V TO-92 JFETs RoHS

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FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));3V@1A/Gate-Source Breakdown Voltage (Vgss);35V/Pd - Power Dissipation;625mW/RDS(on);30Ω/Drain Current (Idss);20mA@15V/Operating Temperature;-55℃~+150℃20mA@15V 625mW 1 N-channel 30Ω 35V... Read more

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    Description

    FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));3V@1A/Gate-Source Breakdown Voltage (Vgss);35V/Pd - Power Dissipation;625mW/RDS(on);30Ω/Drain Current (Idss);20mA@15V/Operating Temperature;-55℃~+150℃


    20mA@15V 625mW 1 N-channel 30Ω 35V TO-92 JFETs RoHS

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