FET Type;1 N-channel/Gate-Source Breakdown Voltage (Vgss);35V/Pd - Power Dissipation;625mW/RDS(on);100Ω/Drain Current (Idss);2mA@15V/Ciss-Input Capacitance;28pF@0V/Operating Temperature;-55℃~+150℃@(Tj)625mW 1 N-channel 2mA@15V 100Ω 35V TO-92 JFETs... Read more

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