NTE Electronics-JFETs-NTE489

Description

FET Type;1 P-Channel/Gate-Source Cutoff Voltage (VGS(off));500mV@1nA/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;360mW/Drain Current (Idss);2mA@15V/Ciss-Input Capacitance;32pF@15V/Operating Temperature;-55℃~+135℃@(Tj)


360mW 1 P-Channel 2mA@15V 30V TO-92 JFETs

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FET Type;1 P-Channel/Gate-Source Cutoff Voltage (VGS(off));500mV@1nA/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;360mW/Drain Current (Idss);2mA@15V/Ciss-Input Capacitance;32pF@15V/Operating Temperature;-55℃~+135℃@(Tj)360mW 1 P-Channel 2mA@15V 30V... Read more

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    Description

    FET Type;1 P-Channel/Gate-Source Cutoff Voltage (VGS(off));500mV@1nA/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;360mW/Drain Current (Idss);2mA@15V/Ciss-Input Capacitance;32pF@15V/Operating Temperature;-55℃~+135℃@(Tj)


    360mW 1 P-Channel 2mA@15V 30V TO-92 JFETs

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