FET Type;1 N-channel/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;625mW/RDS(on);100Ω/Ciss-Input Capacitance;14pF@20V/Operating Temperature;-55℃~+150℃625mW 1 N-channel 100Ω 30V TO-92-3 JFETs Read more

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