NTE Electronics-Phototransistors-NTE30052

Description

/Collector - Emitter Voltage VCEO;30V/Dark Current;100nA/Operating Temperature;-25℃~+85℃/Pd - Power Dissipation;150mW/Peak Wavelength;900nm


30V 900nm 100nA Through Hole Phototransistors

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/Collector - Emitter Voltage VCEO;30V/Dark Current;100nA/Operating Temperature;-25℃~+85℃/Pd - Power Dissipation;150mW/Peak Wavelength;900nm30V 900nm 100nA Through Hole Phototransistors Read more

$2.49 Excl. VAT

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    Description

    /Collector - Emitter Voltage VCEO;30V/Dark Current;100nA/Operating Temperature;-25℃~+85℃/Pd - Power Dissipation;150mW/Peak Wavelength;900nm


    30V 900nm 100nA Through Hole Phototransistors

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