NTE Electronics-Phototransistors-NTE3122

Description

/Collector - Emitter Voltage VCEO;35V/Dark Current;10uA/Operating Temperature;-25℃~+85℃/Current - Collector(Ic);4mA/Pd - Power Dissipation;75mW/Peak Wavelength;860nm


4mA 35V 860nm 10uA Through Hole Phototransistors

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/Collector - Emitter Voltage VCEO;35V/Dark Current;10uA/Operating Temperature;-25℃~+85℃/Current - Collector(Ic);4mA/Pd - Power Dissipation;75mW/Peak Wavelength;860nm4mA 35V 860nm 10uA Through Hole Phototransistors Read more

$12.54 Excl. VAT

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    Description

    /Collector - Emitter Voltage VCEO;35V/Dark Current;10uA/Operating Temperature;-25℃~+85℃/Current - Collector(Ic);4mA/Pd - Power Dissipation;75mW/Peak Wavelength;860nm


    4mA 35V 860nm 10uA Through Hole Phototransistors

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