Drain to Source Voltage;12V/Gate Charge(Qg);3.5nC@4V/Type;N-Channel/Pd - Power Dissipation;900mW/RDS(on);48mΩ@4.5V/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1.4V12V 48mΩ@4.5V 900mW Single FETs, MOSFETs RoHS Read more

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