NXP-Bipolar RF Transistors-BFU520YX

Description

type;NPN/Current - Collector(Ic);30mA/Collector - Emitter Voltage VCEO;12V/Pd - Power Dissipation;450mW/Transition frequency(fT);10GHz/Current - Collector Cutoff;1nA/Operating Temperature;-40℃~+150℃/Emitter-Base Voltage(Vebo);3V/Number;2 NPN


12V 450mW 30mA NPN SOT-363-6 Bipolar RF Transistors RoHS

Product form

type;NPN/Current - Collector(Ic);30mA/Collector - Emitter Voltage VCEO;12V/Pd - Power Dissipation;450mW/Transition frequency(fT);10GHz/Current - Collector Cutoff;1nA/Operating Temperature;-40℃~+150℃/Emitter-Base Voltage(Vebo);3V/Number;2 NPN12V 450mW 30mA NPN... Read more

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    Description

    type;NPN/Current - Collector(Ic);30mA/Collector - Emitter Voltage VCEO;12V/Pd - Power Dissipation;450mW/Transition frequency(fT);10GHz/Current - Collector Cutoff;1nA/Operating Temperature;-40℃~+150℃/Emitter-Base Voltage(Vebo);3V/Number;2 NPN


    12V 450mW 30mA NPN SOT-363-6 Bipolar RF Transistors RoHS

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