NXP-Single Bipolar Transistors-BC847QAPN147

Description

type;NPN+PNP/Collector - Emitter Voltage VCEO;45V/Current - Collector(Ic);100mA/Pd - Power Dissipation;350mW/Operating Temperature;-55℃~+150℃/Transition frequency(fT);100MHz/Current - Collector Cutoff;15nA/Emitter-Base Voltage(Vebo);6V


NPN+PNP 350mW 100mA 45V XFDFN-6 Single Bipolar Transistors RoHS

Product form

type;NPN+PNP/Collector - Emitter Voltage VCEO;45V/Current - Collector(Ic);100mA/Pd - Power Dissipation;350mW/Operating Temperature;-55℃~+150℃/Transition frequency(fT);100MHz/Current - Collector Cutoff;15nA/Emitter-Base Voltage(Vebo);6VNPN+PNP 350mW 100mA 45V XFDFN-6... Read more

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    Description

    type;NPN+PNP/Collector - Emitter Voltage VCEO;45V/Current - Collector(Ic);100mA/Pd - Power Dissipation;350mW/Operating Temperature;-55℃~+150℃/Transition frequency(fT);100MHz/Current - Collector Cutoff;15nA/Emitter-Base Voltage(Vebo);6V


    NPN+PNP 350mW 100mA 45V XFDFN-6 Single Bipolar Transistors RoHS

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