NXP-Single Bipolar Transistors-BC859CW/ZL115

Description

type;PNP/Collector - Emitter Voltage VCEO;30V/Current - Collector(Ic);100mA/Pd - Power Dissipation;200mW/Operating Temperature;-65℃~+150℃/Transition frequency(fT);100MHz/Current - Collector Cutoff;15nA/Emitter-Base Voltage(Vebo);5V


PNP 200mW 100mA 30V SOT-323-3 Single Bipolar Transistors RoHS

Product form

type;PNP/Collector - Emitter Voltage VCEO;30V/Current - Collector(Ic);100mA/Pd - Power Dissipation;200mW/Operating Temperature;-65℃~+150℃/Transition frequency(fT);100MHz/Current - Collector Cutoff;15nA/Emitter-Base Voltage(Vebo);5VPNP 200mW 100mA 30V SOT-323-3... Read more

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    Description

    type;PNP/Collector - Emitter Voltage VCEO;30V/Current - Collector(Ic);100mA/Pd - Power Dissipation;200mW/Operating Temperature;-65℃~+150℃/Transition frequency(fT);100MHz/Current - Collector Cutoff;15nA/Emitter-Base Voltage(Vebo);5V


    PNP 200mW 100mA 30V SOT-323-3 Single Bipolar Transistors RoHS

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