NXP-Single Bipolar Transistors-BCM856DS/DG/B2115

Description

type;PNP/Number;2 PNP/Collector - Emitter Voltage VCEO;65V/Current - Collector(Ic);100mA/Pd - Power Dissipation;380mW/Operating Temperature;-55℃~+150℃/Transition frequency(fT);175MHz/Current - Collector Cutoff;5uA/Emitter-Base Voltage(Vebo);5V


PNP 2 PNP 380mW 100mA 65V Single Bipolar Transistors RoHS

Product form

type;PNP/Number;2 PNP/Collector - Emitter Voltage VCEO;65V/Current - Collector(Ic);100mA/Pd - Power Dissipation;380mW/Operating Temperature;-55℃~+150℃/Transition frequency(fT);175MHz/Current - Collector Cutoff;5uA/Emitter-Base Voltage(Vebo);5VPNP 2 PNP 380mW... Read more

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    Description

    type;PNP/Number;2 PNP/Collector - Emitter Voltage VCEO;65V/Current - Collector(Ic);100mA/Pd - Power Dissipation;380mW/Operating Temperature;-55℃~+150℃/Transition frequency(fT);175MHz/Current - Collector Cutoff;5uA/Emitter-Base Voltage(Vebo);5V


    PNP 2 PNP 380mW 100mA 65V Single Bipolar Transistors RoHS

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