NXP-Single Bipolar Transistors-PBSS4160PANS115

Description

type;NPN/Number;2 NPN/Collector - Emitter Voltage VCEO;60V/Pd - Power Dissipation;760mW/Operating Temperature;-55℃~+150℃/Transition frequency(fT);175MHz/Current - Collector Cutoff;50uA/Vce Saturation(VCE(sat));240mV/Emitter-Base Voltage(Vebo);7V


NPN 2 NPN 760mW 60V Single Bipolar Transistors RoHS

Product form

type;NPN/Number;2 NPN/Collector - Emitter Voltage VCEO;60V/Pd - Power Dissipation;760mW/Operating Temperature;-55℃~+150℃/Transition frequency(fT);175MHz/Current - Collector Cutoff;50uA/Vce Saturation(VCE(sat));240mV/Emitter-Base Voltage(Vebo);7VNPN 2 NPN 760mW 60V... Read more

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    Description

    type;NPN/Number;2 NPN/Collector - Emitter Voltage VCEO;60V/Pd - Power Dissipation;760mW/Operating Temperature;-55℃~+150℃/Transition frequency(fT);175MHz/Current - Collector Cutoff;50uA/Vce Saturation(VCE(sat));240mV/Emitter-Base Voltage(Vebo);7V


    NPN 2 NPN 760mW 60V Single Bipolar Transistors RoHS

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