NXP-Single Bipolar Transistors-PDTA114ET/DG/B2215

Description

type;PNP/Number;1 PNP/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;250mW/Operating Temperature;-65℃~+150℃/Transition frequency(fT);180MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));150mV/Emitter-Base Voltage(Vebo);10V


PNP 1 PNP 250mW 100mA 50V TO-236AB-3 Single Bipolar Transistors RoHS

Product form

type;PNP/Number;1 PNP/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;250mW/Operating Temperature;-65℃~+150℃/Transition frequency(fT);180MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));150mV/Emitter-Base Voltage(Vebo);10VPNP 1 PNP... Read more

$45.00 Excl. VAT

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    Description

    type;PNP/Number;1 PNP/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;250mW/Operating Temperature;-65℃~+150℃/Transition frequency(fT);180MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));150mV/Emitter-Base Voltage(Vebo);10V


    PNP 1 PNP 250mW 100mA 50V TO-236AB-3 Single Bipolar Transistors RoHS

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