NXP-Single Bipolar Transistors-PDTB143ET215

Description

type;PNP/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);500mA/Pd - Power Dissipation;460mW/Operating Temperature;-55℃~+175℃/Transition frequency(fT);140MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));100mV/Emitter-Base Voltage(Vebo);10V


PNP 460mW 500mA 50V Single Bipolar Transistors RoHS

Product form

type;PNP/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);500mA/Pd - Power Dissipation;460mW/Operating Temperature;-55℃~+175℃/Transition frequency(fT);140MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));100mV/Emitter-Base Voltage(Vebo);10VPNP 460mW 500mA 50V... Read more

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    Description

    type;PNP/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);500mA/Pd - Power Dissipation;460mW/Operating Temperature;-55℃~+175℃/Transition frequency(fT);140MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));100mV/Emitter-Base Voltage(Vebo);10V


    PNP 460mW 500mA 50V Single Bipolar Transistors RoHS

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