NXP-Single FETs, MOSFETs-BUK6212-40C,118

Description

Drain to Source Voltage;40V/Gate Charge(Qg);33.9nC@10V/Number;1 N-channel/Pd - Power Dissipation;80W/RDS(on);11.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;1.9nF


40V 11.2mΩ@10V 1 N-channel 80W DPAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);33.9nC@10V/Number;1 N-channel/Pd - Power Dissipation;80W/RDS(on);11.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;1.9nF40V 11.2mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);33.9nC@10V/Number;1 N-channel/Pd - Power Dissipation;80W/RDS(on);11.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;1.9nF


    40V 11.2mΩ@10V 1 N-channel 80W DPAK Single FETs, MOSFETs RoHS

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