NXP-Single FETs, MOSFETs-BUK624R5-30C,118

Description

Drain to Source Voltage;30V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Pd - Power Dissipation;158W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;4.707nF


30V 4.5mΩ@10V 1 N-channel 158W DPAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Pd - Power Dissipation;158W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;4.707nF30V 4.5mΩ@10V 1... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Pd - Power Dissipation;158W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;4.707nF


    30V 4.5mΩ@10V 1 N-channel 158W DPAK Single FETs, MOSFETs RoHS

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