NXP-Single FETs, MOSFETs-BUK6E2R3-40C,127

Description

Drain to Source Voltage;40V/Gate Charge(Qg);260nC@10V/Number;1 N-channel/Pd - Power Dissipation;306W/RDS(on);2.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2.8V


40V 2.3mΩ@10V 1 N-channel 306W I2PAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);260nC@10V/Number;1 N-channel/Pd - Power Dissipation;306W/RDS(on);2.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2.8V40V 2.3mΩ@10V 1 N-channel... Read more

$7.71 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);260nC@10V/Number;1 N-channel/Pd - Power Dissipation;306W/RDS(on);2.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2.8V


    40V 2.3mΩ@10V 1 N-channel 306W I2PAK Single FETs, MOSFETs RoHS

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