NXP-Single FETs, MOSFETs-BUK6E3R2-55C,127

Description

Drain to Source Voltage;55V/Gate Charge(Qg);258nC@10V/Number;1 N-channel/Pd - Power Dissipation;306W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;15.3nF


55V 3.2mΩ@10V 1 N-channel 306W I2PAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;55V/Gate Charge(Qg);258nC@10V/Number;1 N-channel/Pd - Power Dissipation;306W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;15.3nF55V 3.2mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;55V/Gate Charge(Qg);258nC@10V/Number;1 N-channel/Pd - Power Dissipation;306W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;15.3nF


    55V 3.2mΩ@10V 1 N-channel 306W I2PAK Single FETs, MOSFETs RoHS

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