NXP-Single FETs, MOSFETs-BUK7C10-75AITE,118

Description

Drain to Source Voltage;75V/Gate Charge(Qg);121nC@10V/Number;1 N-channel/Pd - Power Dissipation;272W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+175℃/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.7nF


75V 10mΩ@10V 1 N-channel 272W D2PAK-7 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;75V/Gate Charge(Qg);121nC@10V/Number;1 N-channel/Pd - Power Dissipation;272W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+175℃/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.7nF75V 10mΩ@10V 1 N-channel 272W D2PAK-7... Read more

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    Description

    Drain to Source Voltage;75V/Gate Charge(Qg);121nC@10V/Number;1 N-channel/Pd - Power Dissipation;272W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+175℃/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.7nF


    75V 10mΩ@10V 1 N-channel 272W D2PAK-7 Single FETs, MOSFETs RoHS

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