NXP-Single FETs, MOSFETs-NX7002BK215

Description

Drain to Source Voltage;60V/Gate Charge(Qg);1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;400mW/RDS(on);2.8Ω@10V/Current - Continuous Drain(Id);330mA/Gate Threshold Voltage (Vgs(th));2.1V


60V 2.8Ω@10V 1 N-channel 400mW Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;400mW/RDS(on);2.8Ω@10V/Current - Continuous Drain(Id);330mA/Gate Threshold Voltage (Vgs(th));2.1V60V 2.8Ω@10V 1 N-channel 400mW Single... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;400mW/RDS(on);2.8Ω@10V/Current - Continuous Drain(Id);330mA/Gate Threshold Voltage (Vgs(th));2.1V


    60V 2.8Ω@10V 1 N-channel 400mW Single FETs, MOSFETs RoHS

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