NXP-Single FETs, MOSFETs-PH3120L,115

Description

Drain to Source Voltage;20V/Gate Charge(Qg);48.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;62.5W/RDS(on);2.65mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);100A/Ciss-Input Capacitance;4.457nF


20V 2.65mΩ@10V 1 N-channel 62.5W LFPAK56,Power-SO8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);48.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;62.5W/RDS(on);2.65mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);100A/Ciss-Input Capacitance;4.457nF20V 2.65mΩ@10V 1 N-channel 62.5W LFPAK56,Power-SO8... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);48.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;62.5W/RDS(on);2.65mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);100A/Ciss-Input Capacitance;4.457nF


    20V 2.65mΩ@10V 1 N-channel 62.5W LFPAK56,Power-SO8 Single FETs, MOSFETs RoHS

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