NXP-Single FETs, MOSFETs-PSMN013-100ES,127

Description

Drain to Source Voltage;100V/Gate Charge(Qg);59nC@10V/Type;N-Channel/Pd - Power Dissipation;170W/RDS(on);13.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);136pF/Current - Continuous Drain(Id);68A/Gate Threshold Voltage (Vgs(th));4V/Output Capacitance(Coss);221pF


100V 13.9mΩ@10V 170W Single FETs, MOSFETs RoHS

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Drain to Source Voltage;100V/Gate Charge(Qg);59nC@10V/Type;N-Channel/Pd - Power Dissipation;170W/RDS(on);13.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);136pF/Current - Continuous Drain(Id);68A/Gate Threshold Voltage (Vgs(th));4V/Output Capacitance(Coss);221pF100V... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);59nC@10V/Type;N-Channel/Pd - Power Dissipation;170W/RDS(on);13.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);136pF/Current - Continuous Drain(Id);68A/Gate Threshold Voltage (Vgs(th));4V/Output Capacitance(Coss);221pF


    100V 13.9mΩ@10V 170W Single FETs, MOSFETs RoHS

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