onsemi-Bipolar RF Transistors-MMBTH10LT3G

Description

type;NPN/Collector - Emitter Voltage VCEO;25V/Pd - Power Dissipation;225mW/Transition frequency(fT);650MHz/Current - Collector Cutoff;100nA/Operating Temperature;-55℃~+150℃


25V 225mW NPN SOT-23 Bipolar RF Transistors RoHS

Product form

type;NPN/Collector - Emitter Voltage VCEO;25V/Pd - Power Dissipation;225mW/Transition frequency(fT);650MHz/Current - Collector Cutoff;100nA/Operating Temperature;-55℃~+150℃25V 225mW NPN SOT-23 Bipolar RF Transistors RoHS Read more

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    Description

    type;NPN/Collector - Emitter Voltage VCEO;25V/Pd - Power Dissipation;225mW/Transition frequency(fT);650MHz/Current - Collector Cutoff;100nA/Operating Temperature;-55℃~+150℃


    25V 225mW NPN SOT-23 Bipolar RF Transistors RoHS

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