onsemi-Bipolar RF Transistors-MPSH17

Description

type;NPN/Collector - Emitter Voltage VCEO;15V/Pd - Power Dissipation;350mW/Transition frequency(fT);800MHz/Current - Collector Cutoff;100nA/Operating Temperature;-55℃~+150℃/Emitter-Base Voltage(Vebo);3V/Number;1 NPN


15V 350mW NPN TO-92-3 Bipolar RF Transistors RoHS

Product form

type;NPN/Collector - Emitter Voltage VCEO;15V/Pd - Power Dissipation;350mW/Transition frequency(fT);800MHz/Current - Collector Cutoff;100nA/Operating Temperature;-55℃~+150℃/Emitter-Base Voltage(Vebo);3V/Number;1 NPN15V 350mW NPN TO-92-3 Bipolar RF... Read more

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    Description

    type;NPN/Collector - Emitter Voltage VCEO;15V/Pd - Power Dissipation;350mW/Transition frequency(fT);800MHz/Current - Collector Cutoff;100nA/Operating Temperature;-55℃~+150℃/Emitter-Base Voltage(Vebo);3V/Number;1 NPN


    15V 350mW NPN TO-92-3 Bipolar RF Transistors RoHS

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