onsemi-Bipolar Transistor Arrays-NSVMBT3904DW1T3G

Description

Type;NPN/Collector - Emitter Voltage VCEO;40V/DC Current Gain;100/Current - Collector(Ic);200mA/Pd - Power Dissipation;150mW/Transition frequency(fT);300MHz/Vce Saturation(VCE(sat));300mV/Operating Temperature;-55℃~+150℃


40V NPN 100 200mA 150mW SOT-363-6 Bipolar Transistor Arrays RoHS

Product form

Type;NPN/Collector - Emitter Voltage VCEO;40V/DC Current Gain;100/Current - Collector(Ic);200mA/Pd - Power Dissipation;150mW/Transition frequency(fT);300MHz/Vce Saturation(VCE(sat));300mV/Operating Temperature;-55℃~+150℃40V NPN 100 200mA 150mW SOT-363-6... Read more

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    Description

    Type;NPN/Collector - Emitter Voltage VCEO;40V/DC Current Gain;100/Current - Collector(Ic);200mA/Pd - Power Dissipation;150mW/Transition frequency(fT);300MHz/Vce Saturation(VCE(sat));300mV/Operating Temperature;-55℃~+150℃


    40V NPN 100 200mA 150mW SOT-363-6 Bipolar Transistor Arrays RoHS

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