onsemi-Single Bipolar Transistors-2N3906TF

Description

type;PNP/Collector - Emitter Voltage VCEO;40V/Current - Collector(Ic);200mA/Pd - Power Dissipation;625mW/Operating Temperature;-55℃~+150℃/DC Current Gain;100/Transition frequency(fT);250MHz/Current - Collector Cutoff;50nA/Vce Saturation(VCE(sat));250mV/Emitter-Base Voltage(Vebo);5V


Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625mW Through Hole TO-92-3L

Product form

type;PNP/Collector - Emitter Voltage VCEO;40V/Current - Collector(Ic);200mA/Pd - Power Dissipation;625mW/Operating Temperature;-55℃~+150℃/DC Current Gain;100/Transition frequency(fT);250MHz/Current - Collector Cutoff;50nA/Vce Saturation(VCE(sat));250mV/Emitter-Base Voltage(Vebo);5VBipolar (BJT)... Read more

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    Description

    type;PNP/Collector - Emitter Voltage VCEO;40V/Current - Collector(Ic);200mA/Pd - Power Dissipation;625mW/Operating Temperature;-55℃~+150℃/DC Current Gain;100/Transition frequency(fT);250MHz/Current - Collector Cutoff;50nA/Vce Saturation(VCE(sat));250mV/Emitter-Base Voltage(Vebo);5V


    Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625mW Through Hole TO-92-3L

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