onsemi-Single Bipolar Transistors-BCW33LT3G

Description

type;NPN/Collector - Emitter Voltage VCEO;32V/Current - Collector(Ic);100mA/Pd - Power Dissipation;300mW/Operating Temperature;-55℃~+150℃/DC Current Gain;420/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));250mV


420 NPN 300mW 100mA 32V SOT-23 Single Bipolar Transistors RoHS

Product form

type;NPN/Collector - Emitter Voltage VCEO;32V/Current - Collector(Ic);100mA/Pd - Power Dissipation;300mW/Operating Temperature;-55℃~+150℃/DC Current Gain;420/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));250mV420 NPN 300mW 100mA... Read more

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    Description

    type;NPN/Collector - Emitter Voltage VCEO;32V/Current - Collector(Ic);100mA/Pd - Power Dissipation;300mW/Operating Temperature;-55℃~+150℃/DC Current Gain;420/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));250mV


    420 NPN 300mW 100mA 32V SOT-23 Single Bipolar Transistors RoHS

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