onsemi-Single Bipolar Transistors-MJF31CG

Description

type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;100V/Current - Collector(Ic);3A/Pd - Power Dissipation;28W/Operating Temperature;-65℃~+150℃/DC Current Gain;50/Transition frequency(fT);3MHz/Current - Collector Cutoff;300uA/Vce Saturation(VCE(sat));1.2V/Emitter-Base Voltage(Vebo);5V


Bipolar (BJT) Transistor NPN 100V 3A 3MHz 28W Through Hole TO-220FPAB-3

Product form

type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;100V/Current - Collector(Ic);3A/Pd - Power Dissipation;28W/Operating Temperature;-65℃~+150℃/DC Current Gain;50/Transition frequency(fT);3MHz/Current - Collector Cutoff;300uA/Vce Saturation(VCE(sat));1.2V/Emitter-Base Voltage(Vebo);5VBipolar... Read more

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    Description

    type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;100V/Current - Collector(Ic);3A/Pd - Power Dissipation;28W/Operating Temperature;-65℃~+150℃/DC Current Gain;50/Transition frequency(fT);3MHz/Current - Collector Cutoff;300uA/Vce Saturation(VCE(sat));1.2V/Emitter-Base Voltage(Vebo);5V


    Bipolar (BJT) Transistor NPN 100V 3A 3MHz 28W Through Hole TO-220FPAB-3

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